Compared with the first generation (silicon-based) semiconductors, the third generation semiconductors have a large band gap, high electrical conductivity and high thermal conductivity. The bandgap width of the third-generation semiconductor is nearly three times that of the first- and second-generation semiconductors, and it has stronger high-voltage and high-power capabilities.

The characteristics of silicon carbide devices in specific application scenarios are: 1. High temperature resistance: Silicon-based materials require heat dissipation at 120°C. SiC does not require heat dissipation at a junction temperature of 175°C, and can withstand high temperature environments above 600°C.

Silicon carbide power devices have a wide range of potential applications in high-power and high-voltage fields. They are currently widely used in 600-1700V photovoltaic inverters, industrial power supplies, new energy vehicles, data centers and other fields.