Part Number | VDS,max | ID,max | RDS(on),typ | Package | QG,typ | QRR,typ | Datasheet |
HG65C1R200C | 650V | 200mΩ | TO-220F | 15nC | 44nC |
The HG65C1R200C is available in an TO-220F package, 650V, 200 mΩ GaN FET. It is a normally-off device that combines the latest high-voltage gallium nitride HEMTs with low-voltage silicon MOSFETs to provide superior reliability and performance. HG65C1R035G JEDEC certified, advanced dynamic RDSon test, featuring wide gate safety margin and low reverse recovery. Comply with RoHS, REACH, halogen-free standards. Improves the efficiency of hard-switching and soft-switching circuits (increased power density, reduced system size and weight, lower overall system cost), and is also compatible with traditional Si drivers. D-Mode gallium nitride two-dimensional electron gas has high concentration, low square resistance, cascode threshold voltage is 3V, VGS withstand voltage is between ±20V, dynamic resistance is less than 1.1, and driving is simpler