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HG65C1R070N

GaN

HG65C1R070N

HG65C1R070N Parameter

Part Number VDS,max ID,max RDS(on),typ Package QG,typ QRR,typ Datasheet
HG65C1R070N 650V 24A 70mΩ DFN8*8 9.5nC 110nC HG65C1R070NPDF

HG65C1R070N Application scope

GaN chargerTVAdapterSocket

Other introduction

The HG65C1R070N is available in an DFN8*8 package, 650V, 70 mΩ GaN FET. It is a normally-off device that combines the latest high-voltage gallium nitride HEMTs with low-voltage silicon MOSFETs to provide superior reliability and performance. HG65C1R035G JEDEC certified, advanced dynamic RDSon test, featuring wide gate safety margin and low reverse recovery. Comply with RoHS, REACH, halogen-free standards. Improves the efficiency of hard-switching and soft-switching circuits (increased power density, reduced system size and weight, lower overall system cost), and is also compatible with traditional Si drivers. D-Mode gallium nitride two-dimensional electron gas has high concentration, low square resistance, cascode threshold voltage is 3V, VGS withstand voltage is between ±20V, dynamic resistance is less than 1.1, and driving is simpler


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sample application

After receiving your sample request, we will contact you within 24 hours.
After you receive the sample, please test it in the application project as soon as possible and send the usage status via emailast@asiasemitech.comGive us feedback。

After receiving your sample request, we will contact you within 24 hours. After you receive the sample, please test it in the application project as soon as possible and send the usage status via emailast@asiasemitech.comGive us feedback。