The HG65C1R120N is available in an 8 x 8 DFN package, 650V, 120 mΩ GaN FET. It is a normally-off device that combines the latest high-voltage gallium nitride HEMTs with low-voltage silicon MOSFETs to provide superior reliability and performance. HG65C1R120N JEDEC certified, advanced dynamic RDSon test, featuring wide gate safety margin and low reverse recovery. Comply with RoHS, REACH, halogen-free standards. Improves the efficiency of hard-switching and soft-switching circuits (increased power density, reduced system size and weight, lower overall system cost), and is also compatible with traditional Si drivers. D-Mode gallium nitride two-dimensional electron gas concentration is high, the square resistance is low, the cascode threshold voltage is 3V, the VGS withstand voltage is between ±20V, the dynamic resistance is less than 1.1, and the drive is simpler.