The HG65C1R200N is available in an 8 x 8 DFN package, 650V, 200 mΩ GaN FET. It is a normally-off device that combines the latest high-voltage gallium nitride HEMTs with low-voltage silicon MOSFETs to provide superior reliability and performance. KT65C1R200D JEDEC certified, advanced dynamic RDSon test, featuring wide gate safety margin and low reverse recovery. Comply with RoHS, REACH, halogen-free standards. Improves the efficiency of hard-switching and soft-switching circuits (increased power density, reduced system size and weight, lower overall system cost), and is also compatible with traditional Si drivers. D-Mode gallium nitride two-dimensional electron gas has high concentration, low square resistance, cascode threshold voltage is 3V, VGS withstand voltage is between ±20V, dynamic resistance is less than 1.1, and driving is simpler