Gallium Nitride (GaN) enables smaller, lighter, more efficient desktop AC-DC power supplies for portable products. Gallium nitride (GaN) is a wide bandgap semiconductor material.
| Part Number | Image | VDS,max | ID,max | RDS(on),typ | Package | QG,typ | QRR,typ | Datasheet |
| HGN65C1R120F |  |
650V | 22A | 87mΩ | TO-220 | 14.3nC | 103nC |  |
| HG70C1R460L |  |
700V | 5A | 460mΩ | TO-252 | 11nC | 25nC | |
| HG65C1R200L | |
650V | 12A | 167mΩ | TO-252 | 11.1nC | 43nC | |
| HG65C1R200C |  |
650V | 200mΩ | TO-220F | 15nC | 44nC | |
|
| HG65C1R070N |  |
650V | 24A | 70mΩ | DFN8*8 | 9.5nC | 110nC | |
| HG65C1R070G | |
650V | 32A | 70mΩ | TO-247 | 13nC | 140nC | |
| HG65C1R070F |  |
650V | 32A | 70mΩ | TO-220 | 9.5nC | 110nC | |
| HG65C1R035G | |
650V | 24A | 35mΩ | DFN8*8 | 9.5nC | 110nC | |
| HG65C1R120N |  |
650V | 17A | 120mΩ | DFN8*8 | 16.2nC | 84nC | |
| HG65C1R200N |  |
650V | 12A | 200mΩ | DFN8*8 | 11.9nC | 53nC | |
