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HDS065J004L3

SiC

HDS065J004L3

HDS065J004L3 Parameter

Part Number Qualification Voltage IF(135℃) QC Package Datasheet
HDS065J004L3 Industry 650V 7A 55nC TO-252-2L HDS065J004L3PDF

HDS065J004L3 Application scope

DC charging pilePVEnergy storageElectric carUPSData center

Other introduction

Compared with the first generation (silicon-based) semiconductors, the third generation semiconductors have a large band gap, high electrical conductivity and high thermal conductivity. The bandgap width of the third-generation semiconductor is nearly three times that of the first- and second-generation semiconductors, and it has stronger high-voltage and high-power capabilities.

The characteristics of silicon carbide devices in specific application scenarios are: 1. High temperature resistance: Silicon-based materials require heat dissipation at 120°C. SiC does not require heat dissipation at a junction temperature of 175°C, and can withstand high temperature environments above 600°C.

Silicon carbide power devices have a wide range of potential applications in high-power and high-voltage fields. They are currently widely used in 600-1700V photovoltaic inverters, industrial power supplies, new energy vehicles, data centers and other fields.

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sample application

After receiving your sample request, we will contact you within 24 hours.
After you receive the sample, please test it in the application project as soon as possible and send the usage status via emailast@asiasemitech.comGive us feedback。

After receiving your sample request, we will contact you within 24 hours. After you receive the sample, please test it in the application project as soon as possible and send the usage status via emailast@asiasemitech.comGive us feedback。