IGBT is a device composed of MOSFETs and bipolar transistors. Its input pole is MOSFET, and the output pole is PNP transistor. It combines the advantages of these two devices. It not only has the advantages of low driving power and fast switching speed of MOSFET devices, but also has the advantages of reduced saturation voltage and large capacity of bipolar devices. Its frequency characteristics are between MOSFETs and power transistors, and it can operate normally in the frequency range of tens of kHz. It has been increasingly widely used in modern power electronics technology, occupying a dominant position in high frequency and medium power applications.
